2SK1254 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SK1254

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK1254(L), 2SK1254(S)

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS 120

Gate to source breakdown

voltage

V(BR)GSS ±20

Gate to source leak current

I GSS

—

Zero gate voltage drain current IDSS

—

Gate to source cutoff voltage VGS(off) 1.0

Static Drain to source on state RDS(on) —

resistance

—

Forward transfer admittance |yfs|

2.4

Input capacitance

Ciss —

Output capacitance

Coss —

Reverse transfer capacitance Crss —

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Note: 1. Pulse test

Typ Max Unit

—

—

V

—

—

V

—

±10 µA

—

100 µA

—

2.0

V

0.30 0.40 Ω

0.35 0.55 Ω

4.0

—

S

420 —

pF

190 —

pF

25

—

pF

5

—

ns

20

—

ns

150 —

ns

45

—

ns

0.95 —

V

160 —

ns

Test conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS = 100 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 2 A, VGS = 10 V *1

ID = 2 A, VGS = 4 V *1

ID = 2 A, VDS = 10 V *1

VDS = 10 V, VGS = 0,

f = 1 MHz

ID = 2 A, VGS = 10 V,

RL = 15 Ω

IF = 3 A, VGS = 0

IF = 3 A, VGS = 0,

diF/dt = 50 A/µs

3

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