2SJ486ZU-TL-E Ver la hoja de datos (PDF) - Renesas Electronics
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Fabricante
2SJ486ZU-TL-E Datasheet PDF : 7 Pages
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2SJ486
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. PW ≤ 100 µs, duty cycle ≤ 10%
Symbol
VDSS
VGSS
ID
ID (pulse) Note 1
Pch
Tch
Tstg
Value
–30
±10
–0.3
–0.6
150
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
mW
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Note: 2. Pulse test
Symbol
V (BR) DSS
V (BR) GSS
IDSS
IGSS
VGS (off)
RDS (on)
RDS (on)
|yfs|
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Min
–30
±10
—
—
–0.5
—
—
0.4
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.5
0.7
0.65
45
76
5.4
120
340
850
550
Max
—
—
–1.0
±5.0
–1.5
0.65
1.2
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
(Ta = 25°C)
Test Conditions
ID = –10 µA, VGS = 0
IG = ±100 µA, VDS = 0
VDS = –30 V, VGS = 0
VGS = ±6.5 V, VDS = 0
ID = –10 µA, VDS = –5 V
ID = –100 mA, VGS = –4 V Note 2
ID = –100 mA, VGS = –2.5 V Note 2
ID = –100 mA, VDS = –10 V Note 2
VDS = –10 V
VGS = 0
f = 1 MHz
VGS = –4 V
ID = –150 mA
RL = 66.6 Ω
Rev.3.00 Sep 07, 2005 page 2 of 6
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