2SJ550S Ver la hoja de datos (PDF) - Renesas Electronics

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componentes Descripción

Fabricante

2SJ550S

Silicon P-Channel MOS FET High Speed Power Switching

Renesas Electronics 

2SJ550(L), 2SJ550(S)

Silicon P Channel MOS FET

Description

High speed power switching

REJ03G0897-0300

(Previous: ADE-208-633A)

Rev.3.00

Sep 07, 2005

Features

• Low on-resistance

RDS (on) = 0.075 Ω typ.

• Low drive current.

• 4 V gate drive devices.

• High speed switching.

Outline

RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B

(Package name: LDPAK (L) )

(Package name: LDPAK (S)-(1) )

4

D

4

1

2

3

123

G

S

1. Gate

2. Drain

3. Source

4. Drain

Rev.3.00 Sep 07, 2005 page 1 of 8

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