2SJ544 Ver la hoja de datos (PDF) - Renesas Electronics

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componentes Descripción

Fabricante

2SJ544

Silicon P Channel MOS FET High Speed Power Switching

Renesas Electronics 

2SJ544

Silicon P Channel MOS FET

Description

High speed power switching

Features

• Low on-resistance

RDS (on) = 0.028 Ω typ.

• Low drive current.

• 4 V gate drive devices.

• High speed switching.

Outline

RENESAS Package code: PRSS0004AC-A

(Package name: TO-220AB)

D

123

G

S

REJ03G0891-0300

(Previous: ADE-208-648A)

Rev.3.00

Sep 07, 2005

1. Gate

2. Drain (Flange)

3. Source

Rev.3.00 Sep 07, 2005 page 1 of 7

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