2SJ600 Ver la hoja de datos (PDF) - NEC => Renesas Technology

Número de pieza

componentes Descripción

Fabricante

2SJ600

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

NEC => Renesas Technology 

PACKAGE DRAWINGS (Unit : mm)

1) TO-251 (MP-3)

6.5±0.2

5.0±0.2

4

123

1.1±0.2

2.3±0.2

0.5±0.1

2.3 2.3

0.5-+00..12

0.5-+00..12

1.Gate

2.Drain

3.Source

4.Fin (Drain)

2SJ600

2) TO-252 (MP-3Z)

6.5±0.2

5.0±0.2

4

2.3±0.2

0.5±0.1

123

1.1±0.2

2.3 2.3

0.9 0.8

MAX. MAX.

0.8

1. Gate

2. Drain

3. Source

4. Fin (Drain)

EQUIVALENT CIRCUIT

Drain

Gate

Body

Diode

Gate

Protection

Diode

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

Preliminary Data Sheet D14645EJ1V0DS

3

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