2SJ600 Ver la hoja de datos (PDF) - NEC => Renesas Technology
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2SJ600 Datasheet PDF : 4 Pages
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2SJ600
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
Gate Leakage Current
IDSS
VDS = –60 V, VGS = 0 V
IGSS
VGS = +20 V, VDS = 0 V
Gate Cut-off Voltage
VGS(off) VDS = –10 V, ID = –1 mA
Forward Transfer Admittance
| yfs | VDS = –10 V, ID = –13 A
Drain to Source On-state Resistance
RDS(on)1 VGS = –10 V, ID = –13 A
RDS(on)2 VGS = –4.0 V, ID = –13 A
Input Capacitance
Ciss
VDS = –10 V,
Output Capacitance
Coss
VGS = 0 V,
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
ID = –13 A,
Rise Time
tr
VGS(on) = –10 V,
Turn-off Delay Time
td(off)
VDD = –30 V,
Fall Time
tf
RG = 0 Ω
Total Gate Charge
QG
ID = –25 A,
Gate to Source Charge
QGS VDD= –48 V,
Gate to Drain Charge
QGD
VGS = –10 V
Body Diode Forward Voltage
VF(S-D) IF = –25 A, VGS = 0 V
Reverse Recovery Time
trr
IF = –25 A, VGS = 0 V
Reverse Recovery Charge
Qrr
di/dt = –100 A / µs
MIN. TYP. MAX.
–10
+10
1.5 2.0 2.5
10 20
41 50
55 79
1900
350
140
9
10
67
19
38
7
10
1.0
49
100
UNIT
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
L
PG
50 Ω
VDD
VGS = –20 V → 0 V
−
IAS BVDSS
VDS
ID
VDD
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS (−)
0
τ
τ = 1 µs
Duty Cycle ≤ 1%
RL
VGS (−)
VGS
Wave Form
10%
0
VGS(on) 90%
VDD
VDS (−)
90%
VDS
VDS
0
Wave Form
10% 10%
90%
td(on) tr td(off) tf
ton
toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = −2 mA
RL
PG.
50 Ω
VDD
2
Preliminary Data Sheet D14645EJ1V0DS
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