2SJ600 Ver la hoja de datos (PDF) - NEC => Renesas Technology
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2SJ600 Datasheet PDF : 4 Pages
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PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ600
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SJ600 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
FEATURES
• Low on-state resistance:
RDS(on)1 = 50 mΩ MAX. (VGS = –10 V, ID = –13 A)
RDS(on)2 = 79 mΩ MAX. (VGS = –4.0 V, ID = –13 A)
• Low Ciss: Ciss = 1900 pF TYP.
• Built-in gate protection diode
• TO-251/TO-252 package
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ600
TO-251
2SJ600-Z
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
–60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
+20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
+25
A
ID(pulse)
+70
A
Total Power Dissipation (TC = 25°C)
PT
45
W
Total Power Dissipation (TA = 25°C)
PT
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg –55 to +150 °C
IAS
–25
A
EAS
62.5
mJ
(TO-251)
(TO-252)
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = –20 V ¡ 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14645EJ1V0DS00 (1st edition)
Date Published November 2000 NS CP(K)
©
Printed in Japan
2000
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