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Número de pieza
componentes Descripción
2SJ619(2002) Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
2SJ619
(Rev.:2002)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV)
Toshiba
2SJ619 Datasheet PDF : 0 Pages
R
DS (ON)
-
Tc
0.5
Common source
pulse test
0.4
ID
= -
8 V
-
4
-
8
0.3
-
2
-
2, 4
0.2
VGS
= -
4 V
0.1
VGS
= -
10 V
0
-
80
-
40
0
40
80
120
160
Case temperature Tc (°C)
2SJ619
-
30
Common source
Tc
=
25°C
pulse test
-
10
I
DR
-
V
DS
-
5
-
3
VGS
= -
10 V
-
1.0
-
5
-
3
-
2
-
0.5
-
0.3
0
-
1
0, 1
0.2
0.4
0.6
0.8
1.0
Drain-source voltage V
DS
(V)
Capacitance – V
DS
5000
3000
1000
Ciss
500
300
Coss
Crss
100
50
30
Common source
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
10
-
0.1
-
0.3
-
1
-
3
-
10
-
30
-
100
Drain-source voltage V
DS
(V)
V
th
-
Tc
-
4
Common source
VDS
= -
10 V
ID
= -
1 mA
pulse test
-
3
-
2
-
1
0
-
80
-
40
0
40
80
120
160
Case temperature Tc (°C)
P
D
-
Tc
100
80
60
40
20
0
0
40
80
120
160
200
Case temperature Tc (°C)
-
100
-
80
-
60
Dynamic input/output characteristics
Common source
-
20
ID
= -
16 A
Tc
=
25°C
pulse test
-
16
VDS
-
12
VDD
= -
80 V
-
40
-
40
-
8
-
20
-
20
-
4
VGS
0
0
0
20
40
60
80
100
Total gate charge Q
g
(nC)
4
2002-08-09
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