2SJ619(2002) Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
| 2SJ619 Datasheet PDF : 0 Pages | |||
2SJ619
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-ON time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
ïYfsï
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = -100 V, VGS = 0 V
ID = -10 mA, VGS = 0 V
VDS = -10 V, ID = -1 mA
VGS = -4 V, ID = -6 A
VGS = -10 V, ID = -6 A
VDS = -10 V, ID = -6 A
VDS = -10 V, VGS = 0 V, f = 1 MHz
Min Typ. Max Unit
¾
¾
±10
mA
¾
¾ -100 mA
-100 ¾
¾
V
-0.8
¾
-2.0
V
¾ 0.25 0.32
W
0.15 0.21
4.5
7.7
¾
S
¾ 1100 ¾
¾
210
¾
pF
¾
440
¾
tr
VGS 0 V
-10 V
ton
¾
18
¾
ID = -8 A VOUT
¾
30
¾
RL = 6.25 W
ns
tf
¾
18
¾
Duty <= 1%, tw = 10 ms VDD ~- -50 V
toff
¾
65
¾
Qg
¾
48
¾
Qgs
VDD ~- -80 V, VGS = -10 V, ID = -16 A
¾
29
¾
nC
Qgd
¾
19
¾
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
¾
¾
IDR = -16 A, VGS = 0 V
IDR = -16 A, VGS = 0 V,
dIDR/dt = 50 A/ms
Min Typ. Max Unit
¾
¾
-16
A
¾
¾
-64
A
¾
¾
1.7
V
¾
160
¾
ms
¾
0.5
¾
mC
Marking
J619
※
Type
※ Lot Number
Month (starting from alphabet A)
Year (last number of the christian era)
2
2002-08-09
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