2SJ555 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SJ555 Datasheet PDF : 9 Pages
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2SJ555
1000
500
Body–Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = 50 A / µs
10
–0.1 –0.3
VGS = 0, Ta = 25 °C
–1 –3 –10 –30 –100
Reverse Drain Current I DR (A)
50000
20000
10000
5000
2000
1000
500
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
200
100
0
Crss
–10 –20 –30 –40 –50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
0
0
V DD = –10 V
V DS
–25 V
–20
–50 V
–4
–40
–8
V GS
–60
–80
V DD = –50 V –12
–25 V
–10 V
–16
–100 ID = –60 A
0
80 160 240 320
Gate Charge Qg (nc)
–20
400
1000
500
200
100
Switching Characteristics
t d(off)
tf
tr
50
t d(on)
20
10
–0.1 –0.3
V GS = –10 V, V DD = –30 V
PW = 10 µs, duty <= 1 %
–1 –3 –10 –30 –100
Drain Current I D (A)
5
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