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Número de pieza
componentes Descripción
2SJ554 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SJ554
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SJ554 Datasheet PDF : 10 Pages
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2SJ554
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
V
DSS
V
GSS
I
D
I
Note1
D(pulse)
I
DR
I
Note3
AP
E
Note3
AR
Pch
Note2
Channel temperature
Tch
Storage temperature
Tstg
Note:
1. PW
≤
10
µ
s, duty cycle
≤
1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg
≥
50
Ω
Ratings
Unit
–60
V
±20
V
–45
A
–180
A
–45
A
–45
A
173
mJ
100
W
150
°C
–55 to +150
°C
2
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