2SJ553 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SJ553 Datasheet PDF : 9 Pages
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2SJ553(L),2SJ553(S)
Silicon P Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 0.028Ω typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline
LDPAK
D
G
S
ADE-208-650B (Z)
3rd. Edition
Jun 1998
4
4
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
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