2SJ550 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

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componentes Descripción

Fabricante

2SJ550

Silicon P-Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SJ550(L),2SJ550(S)

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown voltage V(BR)DSS

Gate to source breakdown voltage V(BR)GSS

Zero gate voltege drain current IDSS

Gate to source leak current

I GSS

Gate to source cutoff voltage

VGS(off)

Static drain to source on state

RDS(on)

resistance

RDS(on)

Forward transfer admittance

|yfs|

Input capacitance

Ciss

–60

±20

—

—

–1.0

—

—

6.5

—

Output capacitance

Coss —

Reverse transfer capacitance

Crss —

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body–drain diode forward voltage VDF

—

Body–drain diode reverse

recovery time

t rr

—

Note: 4. Pulse test

Typ Max Unit

—

—

V

—

—

V

—

–10 µA

—

±10 µA

—

–2.0 V

0.075 0.095 Ω

0.105 0.155 Ω

11

—

S

850 —

pF

420 —

pF

110 —

pF

12

—

ns

75

—

ns

125 —

ns

75

—

ns

–1.1 —

V

70

—

ns

Test Conditions

ID = –10mA, VGS = 0

IG = ±100µA, VDS = 0

VDS = –60 V, VGS = 0

VGS = ±16V, VDS = 0

ID = –1mA, VDS = –10V

ID = –8A, VGS = –10V Note4

ID = –8A, VGS = –4V Note4

ID = –8A, VDS = –10V Note4

VDS = –10V

VGS = 0

f = 1MHz

VGS = –10V, ID = –8A

RL = 3.75Ω

IF = –15A, VGS = 0

IF = –15A, VGS = 0

diF/ dt =50A/µs

3

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