2SJ544 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

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componentes Descripción

Fabricante

2SJ544

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SJ544

Main Characteristics

Power vs. Temperature Derating

80

60

40

20

0

50

100

150

200

Case Temperature Tc (°C)

–1000

–100

–10

–1

Maximum Safe Operation Area

10 µs

Operation in

this area is

limited by R

DS(oDnCP)OW(Tp=cer1=a0t2imo51ns°m(C11)s0sh0otµ)s

–0.1 Ta = 25 °C

–0.1

–1

–10

Drain to Source Voltage V

–100

DS(V)

Typical Output Characteristics

–50

–8 V

–40

–3.5 V

–5 V

Pulse Test

–4 V

–30

VGS = –10 V

–3 V

–20

–10

–2.5 V

–2 V

0

–2 –4 –6 –8 –10

Drain to Source Voltage V DS(V)

Typical Transfer Characteristics

–50

VDS = –10 V

Pulse Test

–40

–30

–20

–10

Tc = 75 °C

25 °C

-25 °C

0

–1 –2 –3 –4 –5

Gate to Source Voltage V G(SV)

4

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