2SJ529S Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SJ529S Datasheet PDF : 9 Pages
| |||
2SJ529(L),2SJ529(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalenche current
Avalenche energy
Channel dissipation
VDSS
VGSS
ID
I Note1
D(pulse)
I DR
I Note3
AP
E Note3
AR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
Ratings
Unit
–60
V
±20
V
–10
A
–40
A
–10
A
–10
A
8.5
mJ
20
W
150
°C
–55 to +150
°C
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltege drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Note: 4. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
I DSS
I GSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
t d(on)
tr
t d(off)
tf
VDF
t rr
Min
–60
±20
—
—
–1.0
—
—
4.5
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.12
0.17
7.5
580
300
85
10
40
85
60
–1.2
60
Max
—
—
–10
±10
–2.0
0.16
0.24
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = –10mA, VGS = 0
IG = ±100µA, VDS = 0
VDS = –60 V, VGS = 0
VGS = ±16V, VDS = 0
ID = –1mA, VDS = –10V
ID = –5A, VGS = –10V Note4
ID = –5A, VGS = –4V Note4
ID = –5A, VDS = –10V Note4
VDS = –10V
VGS = 0
f = 1MHz
VGS = –10V, ID = –5A
RL = 6Ω
IF = –10A, VGS = 0
IF = –10A, VGS = 0
diF/ dt = 50A/µs
2
Share Link: 