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Número de pieza
componentes Descripción
2SJ518 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SJ518
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SJ518 Datasheet PDF : 10 Pages
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2SJ518
Body–Drain Diode Reverse
Recovery Time
100
50
20
10
–0.1 –0.2
di / dt = 50 A / µs
V
GS
= 0, Ta = 25 °C
–0.5 –1 –2 –5 –10
Reverse Drain Current I
DR
(A)
1000
Typical Capacitance vs.
Drain to Source Voltage
300
Ciss
100
Coss
30
Crss
10
3
V
GS
= 0
1
f = 1 MHz
0 –10 –20 –30 –40 –50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
0
0
V
DD
= –10 V
–25 V
–20
–50 V
–4
–40
V
DS
–60
–80
V
DD
= –10 V
–25 V
–50 V
V
GS
–100
I
D
= –2 A
0
4
8
12 16
Gate Charge Qg (nc)
–8
–12
–16
–20
20
Switching Characteristics
100
50
t
d(off)
20
tf
t
d(on)
10
tr
5
2
1
–0.1 –0.2
V
GS
= –10 V, V
DD
= –30 V
Ta = 25°C, duty < 1 %
–0.5 –1 –2 –5 –10
Drain Current I
D
(A)
6
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