2SJ518 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SJ518 Datasheet PDF : 10 Pages
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2SJ518
Silicon P Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 0.35 Ω typ. at (VGS = –10V, ID = –1A)
• Low drive current
• 4 V gate drive devices
• High speed switching
Outline
UPAK
ADE-208-580B (Z)
3rd. Edition
June 1, 1998
21
3
D
4
G
S
1. Gate
2. Drain
3. Source
4. Drain
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