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Número de pieza
componentes Descripción
2SJ486 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SJ486
Silicon P Channel MOS FET Low FrequencyPower Switching
Hitachi -> Renesas Electronics
2SJ486 Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
2SJ486
1000
300
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
100
Coss
30
Ciss
10
Crss
3
1
0
–4
–8 –12 –16 –20
Drain to Source Voltage V
DS
(V)
10000
Switching Characteristics
3000
1000
300
100
t
d(off)
tf
tr
t
d(on)
30
10
–0.05
V
GS
= –4 V, V
DD
= –10 V
PW = 5
µ
s, duty < 1 %
–0.1 –0.2
–0.5
–1
Drain Current I
D
(A)
Reverse Drain Current vs.
Source to Drain Voltage
–1.0
Pulse Test
–0.8
–0.6
–5 V
–0.4
V
GS
= 0, 5 V
–0.2
0
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V
SD
(V)
5
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