2SJ486 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
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2SJ486 Datasheet PDF : 8 Pages
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2SJ486
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
VDSS
VGSS
ID
I *1
D(pulse)
Pch
Channel temperature
Tch
Storage temperature
Tstg
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
Ratings
Unit
–30
V
±10
V
–0.3
A
–0.6
A
150
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Drain to source breakdown
voltage
V(BR)DSS
Gate to source breakdown
voltage
V(BR)GSS
Zero gate voltege drain
I DSS
current
Gate to source leak current IGSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
RDS(on)
Min
–30
±10
—
—
–0.5
—
—
Forward transfer admittance |yfs|
0.4
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance Crss
—
Turn-on delay time
t d(on)
—
Rise time
tr
—
Turn-off delay time
t d(off)
—
Fall time
tf
—
Notes: 1. Pulse test
2. Marking is “ZU–”.
Typ
—
—
—
—
—
0.5
0.7
0.65
45
76
5.4
120
340
850
550
Max
—
—
–1.0
±5.0
–1.5
0.65
1.2
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
Test Conditions
ID = –10µA, VGS = 0
IG = ±100µA, VDS = 0
VDS = –30 V, VGS = 0
VGS = ±6.5V, VDS = 0
ID = –10µA, VDS = –5V
ID = –100mA
VGS = –4V*1
ID = –40mA
VGS = –2.5V*1
ID = –100mA
VDS = –10V*1
VDS = –10V
VGS = 0
f = 1MHz
VGS = –4V
ID = –150mA
RL = 66.6Ω
2
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