2SJ451 Ver la hoja de datos (PDF) - Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SJ451 Datasheet PDF : 7 Pages
| |||
2SJ451
Silicon P Channel MOS FET
Description
Low frequency power switching
Features
• Low on-resistance.
• Low drive power
• 2.5 V gate drive device.
• Small package (MPAK).
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
G
1
2
Note: Marking is “ZK–”.
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
Symbol
VDSS
VGSS
ID
ID (pulse) Note 1
Pch
Tch
Tstg
REJ03G0864-0400
Rev.4.00
Sep 07, 2007
D
1. Source
2. Gate
3. Drain
S
Value
–20
±20
–0.2
–0.4
150
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
mW
°C
°C
REJ03G864-0400 Rev.4.00 Sep 07, 2007
Page 1 of 6
Share Link: 