2SJ387L-E Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SJ387L-E

Silicon P-Channel MOS FET

Renesas Electronics 

2SJ387(L), 2SJ387(S)

Silicon P Channel MOS FET

Description

High speed power switching

REJ03G0862-0200

(Previous: ADE-208-1196)

Rev.2.00

Sep 07, 2005

Features

• Low on-resistance

• Low drive current

• 2.5 V Gate drive device can be driven from 3 V Source

• Suitable for Switching regulator, DC-DC converter

Outline

RENESAS Package code: PRSS0004ZD-B

(Package name: DPAK (L)-(2) )

4

RENESAS Package code: PRSS0004ZD-C

(Package name: DPAK (S) )

4

D

123

123

G

S

1. Gate

2. Drain

3. Source

4. Drain

Rev.2.00 Sep 07, 2005 page 1 of 7

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