2SJ386TZ-E Ver la hoja de datos (PDF) - Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SJ386TZ-E Datasheet PDF : 6 Pages
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2SJ386
Static Drain to Source on State Resistance
vs. Temperature
1.0
Pulse Test
ID = –3 A
0.8
VGS = –4 V
–1 A
0.6
ID = –5 A
0.4
0.2
–10 V
–3 A –1 A
0
–40 0
40 80 120 160
Ambient Temperature Ta (°C)
1000
500
Typical Capacitance vs.
Drain to Source Voltage
200
Ciss
100
Coss
50
Crss
20
VGS = 0
f = 1 MHz
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage VDS (V)
Switching Characteristics
200
100
tf
50
td(off)
20
tr
10
td(on)
5
2
–0.05 –0.1
VGS = –10 V, VDD = –30 V
PW = 2 µs, duty ≤ 1 %
–0.2 –0.5 –1 –2
–5
Drain Current ID (A)
Forward Transfer Admittance vs.
Drain Current
10
VDS = –10 V
5 Pulse Test
Tc = –25°C
2
25°C
1
75°C
0.5
0.2
0.1
–0.1 –0.2 –0.5 –1 –2
–5 –10
Drain Current ID (A)
Dynamic Input Characteristics
0
0
ID = –3 A
–10
VDD = –10 V
–4
–20 V
–30 V
–20
–8
VDS
–30
–12
VGS
VDD = –30 V
–20 V
–40
–10 V –16
–50
0
4
8
12 16
Gate Charge Qg (nc)
–20
20
Reverse Drain Current vs.
Source to Drain Voltage
–5
Pulse Test
–4
–10 V
–3
–5 V
–2
VGS = 0
–1
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage VSD (V)
Rev.2.00 Sep 07, 2005 page 4 of 5
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