2SJ386 Ver la hoja de datos (PDF) - Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SJ386 Datasheet PDF : 6 Pages
| |||
2SJ386
Main Characteristics
Power vs. Temperature Derating
1.6
1.2
0.8
0.4
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
–2.0
–5 V
–3 V
–4 V
–3.5 V
Ta = 25°C
–1.6
Pulse Test
–1.2
–2.5 V
–0.8
–0.4
VGS = –2 V
0
0
–2 –4 –6 –8 –10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–5
Ta = 25°C
Pulse Test
–4
–3
–2
ID = –5 A
–1
–3 A
–1 A
0
0
–4
–8 –12 –16 –20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 5
Maximum Safe Operation Area
–10
100 µs
–3
PW
–1
= 10 ms
–0.3
–0.1
Operation
DC
in
Operation
this area is
–0.03 limited by RDS (on)
Ta = 25°C
1 shot pulse
–0.01
–0.1 –0.3 –1 –3 –10 –30
–100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
–5
VDS = –10 V
Pulse Test
–4
Tc = –25°C
25°C
–3
75°C
–2
–1
0
0
–1 –2 –3 –4 –5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
10
Pulse Test
5
2
1
0.5
VGS = –4 V
0.2
–10 V
0.1
–0.1 –0.2 –0.5 –1 –2
–5 –10
Drain Current ID (A)
Share Link: 