2SJ452 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SJ452 Datasheet PDF : 8 Pages
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2SJ452
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–2.0
Pulse Test
–1.6
–1.2
–0.8
I D = –0.2 A
–0.4
–0.1 A
–0.05 A
0
–2 –4 –6 –8 –10
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
10
I D = –0.2 A
8
6 V GS = –4 V
–0.1 A
–0.05 A
4
2
0
Pulse Test
–40
0
40 80 120 160
Case Temperature Tc (°C)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
10 VGS = –2.5 V
5
–4 V
2
1
–0.01–0.02 –0.05 –0.1 –0.2 –0.5 –1
Drain Current I D (A)
Forward Transfer Admittance vs.
Drain Current
1
0.5
Tc = –25 °C
0.2
0.1
25 °C
0.05
75 °C
0.02
0.01
–0.01–0.02
V DS = –10 V
Pulse Test
–0.05 –0.1 –0.2 –0.5 –1
Drain Current I D (A)
4
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