2SJ452 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SJ452 Datasheet PDF : 8 Pages
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2SJ452
Silicon P-Channel MOS FET
Application
Low frequency power switching
Features
• Low on-resistance.
• Low drive power
• 2.5 V gate drive device.
• Small package (MPAK).
Outline
MPAK
G
3
1
2
D
1. Source
2. Gate
3. Drain
S
ADE-208-383
1st. Edition
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