2SJ410 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SJ410

Silicon P-Channel MOS FET

Hitachi -> Renesas Electronics 

2SJ410

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Drain to source breakdown

voltage

V(BR)DSS

–200 —

Gate to source breakdown

voltage

V(BR)GSS

±20

—

Gate to source leak current IGSS

Zero gate voltage drain current IDSS

Gate to source cutoff voltage VGS(off)

Static drain to source on state RDS(on)

resistance

—

—

—

—

–2.0 —

—

0.7

Forward transfer admittance |yfs|

2.0 3.2

Input capacitance

Ciss

—

Output capacitance

Coss —

Reverse transfer capacitance Crss

—

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Note: 1. Pulse Test

900

280

65

18

50

90

40

–1.0

220

Max Unit

—

V

—

V

±10 µA

–250 µA

–4.0 V

0.85 Ω

—

S

—

pF

—

pF

—

pF

—

ns

—

ns

—

ns

—

ns

—

V

—

ns

Test conditions

ID = –10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS =–160 V, VGS = 0

ID = –1 mA, VDS = –10 V

ID = –3 A

VGS = –10 V*1

ID = –3 A

VDS = –10 V*1

VDS = –10 V

VGS = 0

f = 1 MHz

ID = –3 A

VGS = –10 V

RL = 6Ω

IF = –6 A, VGS = 0

IF = –6 A, VGS = 0,

diF/dt = 50 A/µs

3

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