2SJ387S Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SJ387S Datasheet PDF : 10 Pages
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2SJ387(L), 2SJ387(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• Low drive current
• 2.5 V Gate drive device can be driven from 3 V Source
• Suitable for Switching regulator, DC - DC converter
Outline
DPAK-2
4
4
123
D
12 3
1. Gate
G
2. Drain
3. Source
4. Drain
S
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