2SJ361 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SJ361

Silicon P-Channel MOS FET

Hitachi -> Renesas Electronics 

2SJ361

Power vs. Temperature Derating

2.0

1.5

1.0

0.5

0

50

100

150

200

Ambient Temperature Ta (°C)

–10

–3

–1

–0.3

–0.1

Maximum Safe Operation Area

Operation in

this area is

(TcD=CP2WO5p=°eCr1a)0tiomns1(1m1s0sh01oµ0t)sµs

limited by RDS(on)

–0.03

–0.01

Ta = 25 °C

–0.05 –0.1 –0.3 –1 –3

Drain to Source Voltage

–10 –30

V DS (V)

Typical Output Characteristics

–5

–10 V

–5 V –3.5 V

–4

–4 V

Pulse Test

–3

–3 V

–2

–2.5 V

–1

–2 V

VGS = –1.5 V

0

–2 –4 –6 –8 –10

Drain to Source Voltage V DS (V)

Typical Transfer Characteristics

–2.0

–1.6 V DS = –10 V

Pulse Test

–1.2

–0.8

75 °C

25 °C

–0.4

Tc = –25 °C

0

–1 –2 –3 –4 –5

Gate to Source Voltage V GS (V)

4

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