2SJ361 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SJ361 Datasheet PDF : 9 Pages
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2SJ361
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 2.5 V gate drive device can be driven from 3 V source
Outline
UPAK
G
21
3
4
D
1. Gate
2. Drain
3. Source
4. Drain
S
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