2SJ244
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
VDSS
VGSS
ID
I *1
D(pulse)
Pch*2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10%
2. Value on the alumina ceramic board (12.5×20×0.7 mm)
3. Marking is “JY”.
Ratings
–12
±7
±2
±4
1
150
–55 to +150
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS –12
Gate to source breakdown
voltage
V(BR)GSS ±7
Gate to source cutoff current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)1
resistance
—
—
–0.4
—
Static drain to source on state RDS(on)2 —
resistance
Forward transfer admittance |yfs|
—
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
t (on)
—
Turn-off delay time
t (off)
—
Body to drain diode forward VDF
—
voltage
Note: 1. Pulse test
Typ Max
—
—
—
—
—
±5
—
–1
—
–1.4
0.65 0.9
0.5
—
1.8
—
130 —
50
—
260 —
365 —
1450 —
—
7
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
V
Test conditions
ID = –1 mA, VGS = 0
IG = ±10 µA, VDS = 0
VGS = ±6 V, VDS = 0
VDS = –8 V, VGS = 0
ID = –100 µA, VDS = –5 V
ID = –0.5 A*1, VGS = –2.5 V
ID = –1 A*1, VGS = –4 V
ID = –1 A*1, VDS = –5 V
VDS = –5 V, VGS = 0,
f = 1 MHz
ID = –0.2 A*1, Vin = –4 V,
RL = 51 Ω
IF = 4 A*1, VGS = 0
2