2SJ221 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SJ221 Datasheet PDF : 8 Pages
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2SJ221
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
–10
–8
Pulse Test
–6
–4
–20 A
–2
–10 A
ID = –5 A
0
–4 –8 –12 –16 –20
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Case Temperature
1.0
0.8
Pulse Test
0.6
ID = –20 A
0.4
–5, –10 A
VGS = –4 V
0.2
–20 A
0
–40
VGS = –10 V –5, –10 A
0
40
80 120 160
Case Temperature TC (°C)
Static Drain to Source on State
Resistance vs. Drain Current
5
3
Pulse Test
1
0.3
VGS = –4 V
0.1
–10 V
0.03
0.01
0.005
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current ID (A)
Forward Transfer Admittance
vs. Drain Current
100
VDS = –10 V
30 Pulse Test
–25°C
TC = 25°C
10
75°C
3
1
0.3
0.5
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current ID (A)
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