2SJ347(2003) Ver la hoja de datos (PDF) - Toshiba
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2SJ347 Datasheet PDF : 5 Pages
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ347
High Speed Switching Applications
Analog Switch Applications
• Low threshold voltage: Vth = −0.5~−1.5 V
• High speed
• Small package
• Complementary to 2SK1830
Marking
Equivalent Circuit
2SJ347
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
VDS
VGSS
ID
PD
Tch
Tstg
Rating
Unit
−20
V
−7
V
−50
mA
100
mW
150
°C
−55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-2H1B
Weight: 2.4 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Gateate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshould voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Symbol
Test Condition
IGSS
V (BR) DSS
IDSS
Vth
Yfs
RDS (ON)
Ciss
Crss
Coss
ton
toff
VGS = −7 V, VDS = 0
ID = −100 µA, VGS = 0
VDS = −20 V, VGS = 0
VDS = −3 V, ID = −0.1 mA
VDS = −3 V, ID = −10 mA
ID = −10 mA, VGS = −2.5 V
VDS = −3 V, VGS = 0, f = 1 MHz
VDS = −3 V, VGS = 0, f = 1 MHz
VDS = −3 V, VGS = 0, f = 1 MHz
VDD = −3 V, ID = −10 mA,
VGS = 0~−2.5 V
VDD = −3 V, ID = −10 mA,
VGS = 0~−2.5 V
Min Typ. Max Unit
−1
µA
−20
V
−1
µA
−0.5
−1.5
V
15
mS
20
40
Ω
10.4
pF
2.8
pF
8.4
pF
0.15
µs
0.13
1
2003-03-27
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