2SJ358 Ver la hoja de datos (PDF) - NEC => Renesas Technology
Número de pieza
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2SJ358 Datasheet PDF : 6 Pages
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2SJ358
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–10 VGS = 0
Pulsed
–1
–0.1
–0.01
–0.001
–0.0001
–0.2 –0.4 –0.6 –0.8 –1.0 –1.2
VSD – Source to Drain Voltage – V
1000
SWITCHING CHARACTERISTICS
VDD = –25 V
VGS(ON) = –10 V
td(off)
100
tf
tr
td(on)
10
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10000 VGS = 0
f = 1 MHz
Ciss
1000
100
Crss
Coss
10
–1
–10
VDS – Drain to Source Voltage – V
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
VGS = 0
di/dt = 50 A/ µs
–100
100
0.1
1
10
ID – Drain Current – A
10
–0.05 –0.1
–0.5 –1
–5 –10
ID – Diode Forward Current – A
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
Single Pulse
Using ceramic board
of 7.5 cm2 × 0.7 mm
10
1
0.1
1m
10 m
100 m
1
10
100
PW – Pulse Width – s
4
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