INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD904
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 35mH
600
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
6
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.75A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB=B 0.6A
ICES
Collector Cutoff Current
VCB= 1500V; VBE= 0
IEBO
Collector Cutoff Current
VEB= 4V; IC= 0
44
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
8
hFE-2
DC Current Gain
IC= 4A; VCE= 5V
5
VECF
C-E Diode Forward Voltage
IF= 4A
V
V
5.0
V
1.6
V
1.0 mA
100 mA
10
2.0
V
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