D823 Ver la hoja de datos (PDF) - Inchange Semiconductor

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Fabricante

D823

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD823

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB=B 0

V(BR)CBO Collector-Base Breakdown Voltage

IC= 5mA; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 5mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A

VBE(sat) Base-Emitter Saturation Voltage

IC= 5A; IB=B 0.5A

ICBO

Collector Cutoff Current

VCB= 40V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 4V; IC= 0

hFE

DC Current Gain

IC= 3A; VCE= 5V

fT

Current-Gain—Bandwidth Product

IC= 1A; VCE= 5V

tf

Fall Time

IC= 5A; IB1= 0.6A

MIN TYP. MAX UNIT

90

V

200

V

7

V

1.5

V

1.5

V

0.1 mA

0.1 mA

20

15

MHz

1.0 μs

isc Website：www.iscsemi.cn

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