D823 Ver la hoja de datos (PDF) - Inchange Semiconductor

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componentes Descripción

Fabricante

D823

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD823

DESCRIPTION

·Collector Current: IC= 6A

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 90V(Min.)

APPLICATIONS

·Designed for B/W TV horizontal output applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO Collector-Base Voltage

200

V

VCEO Collector-Emitter Voltage

VEBO Emitter-Base Voltage

IC

Collector Current-Continuous

ICM

Collector Current-Peak

Total Power Dissipation

PC

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

90

V

7

V

6

A

10

A

40

W

150

℃

-55~150 ℃

isc Website：www.iscsemi.cn

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