2SD669-B-AA3-T Ver la hoja de datos (PDF) - Unisonic Technologies

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2SD669-B-AA3-T

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

Unisonic Technologies 

2SD669/A

NPN SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

180

V

Collector-Emitter Voltage

2SD669

2SD669A

VCEO

120

160

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

IC

1.5

A

Collector Peak Current

lC(PEAK)

3

A

Collector Power Dissipation

Collector Power Dissipation

SOT-223

0.5

W

TO-126

PD

1

W

Junction Temperature

Storage Temperature

TJ

+150

℃

TSTG

-40 ~ +150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)

PARAMETER

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown 2SD669

Voltage

2SD669A

Emitter to Base Breakdown Voltage

Collector Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

Current Gain Bandwidth Product

Output Capacitance

Note: Pulse test.

SYMBOL TEST CONDITIONS

BVCBO IC=1mA, IE=0

BVCEO IC=10mA, RBE=∞

BVEBO

ICBO

hFE1

hFE2

VCE(SAT)

VBE

fT

Cob

IE=1mA, IC=0

VCB=160V, IE=0

VCE=5V, IC=150mA (Note)

VCE=5V, IC=500mA (Note)

IC=600mA, IB=50mA (Note)

VCE=5V, IC=150mA (Note)

VCE=5V, IC=150mA (Note)

VCB=10V, IE=0, f=1MHz

MIN TYP MAX UNIT

180

V

120

V

160

5

V

10 µA

60

320

30

1

V

1.5 V

140

MHz

14

pF

CLASSIFICATION OF hFE1

RANK

RANGE

B

60-120

C

100-200

D

160-320

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R204-005,E

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