D596 Ver la hoja de datos (PDF) - Galaxy Semi-Conductor

Número de pieza

componentes Descripción

Fabricante

D596

Silicon Epitaxial Planar Transistor

Galaxy Semi-Conductor 

BL Galaxy Electrical

Production specification

Silicon Epitaxial Planar Transistor

2SD596

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0

30

V

Collector-emitter breakdown

voltage

V(BR)CEO IC=1mA,IB=B 0

25

V

Emitter-base breakdown voltage

V(BR)EBO IE=100μA,IC=0

5

V

Collector cut-off current

ICBO

VCB=30V,IE=0

0.1 μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1 μA

DC current gain

VCE=1V,IC=100mA

hFE

VCE=1V,IC=700mA

110 200 400

50

Collector-emitter saturation voltage VCE(sat)

IC=700mA, IB=B 70mA

0.22 0.6 V

Base to Emitter voltage

Transition frequency

Output capacitance

VBE

VCE=6V,IC=10mA

fT

VCE=6V, IE= -10mA

Cob

VCB=6V, IE=0,f=10kHz

CLASSIFICATION OF hFE(1)

Range

Marking

110-180

DV1

135-220

DV2

170-270

DV3

600 640

170

12

200-320

DV4

700 V

MHz

pF

250-400

DV5

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSSTC024

Rev.A

www.galaxycn.com

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