2SD2493 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic
Número de pieza
componentes Descripción
Fabricante
2SD2493 Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Darlington Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter breakdown voltage IC=30mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=5mA
VBEsat Base-emitter saturation voltage
IC=5A ;IB=5mA
ICBO
Collector cut-off current
VCB=110V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=5A ; VCE=4V
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=2A ; VCE=12V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A;RL=6Ω
IB1=- IB2=5mA
VCC=30V
hFE Classifications
O
P
5000-12000 6500-20000
Y
15000-30000
www.jmnic.com
2SD2493
MIN
110
5000
TYP.
55
60
MAX
2.5
3.0
100
100
UNIT
V
V
V
μA
μA
pF
MHz
0.8
μs
6.2
μs
1.1
μs
JMnic
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