SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2257
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=1.5A ;IB=1.5mA
VBEsat
Base-emitter saturation voltage
IC=1.5A ;IB=1.5mA
ICBO
Collector cut-off current
VCB=100V ;IE=0
IEBO
Emitter cut-off current
VEB=8V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=2V
hFE-2
DC current gain
IC=2A ; VCE=2V
VECF
Diode forward voltage
IE=1A
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IB1=-IB2=1.5mA
VCC=30V ,RL=20A
Duty cycleB1%
MIN TYP. MAX UNIT
100
V
1.5
V
2.0
V
10
µA
0.8
4.0
mA
2000
2000
2.0
V
0.5
µs
2.0
µs
0.5
µs
2