2SD234 Ver la hoja de datos (PDF) - Inchange Semiconductor

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componentes Descripción

Fabricante

2SD234

NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=5mA ,IB=0

V(BR)CBO Collector-base breakdown voltage

IC=1mA ,IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ,IC=0

VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A

VBEsat Base-emitter saturation voltage

IC=3A; IB=0.3A

ICBO

Collector cut-off current

VCB=40V; IE=0

IEBO

Emitter cut-off current

VEB=4V; IC=0

hFE

DC current gain

IC=0.5A ; VCE=1V

COB

Output capacitance

IE=0 ; VCB=10V,f=1MHz

fT

Transition frequency

IC=0.5A ; VCE=10V

‹ hFE Classifications

R

O

Y

40-80 70-140 120-240

Product Specification

2SD234

MIN TYP. MAX UNIT

50

V

60

V

6

V

1.2

V

1.5

V

10

μA

10

μA

40

240

90

pF

3

MHz

2

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