DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

2SD2249 Ver la hoja de datos (PDF) - Panasonic Corporation

Número de pieza
componentes Descripción
Fabricante
2SD2249
Panasonic
Panasonic Corporation Panasonic
2SD2249 Datasheet PDF : 3 Pages
1 2 3
Transistors
2SD2249
Silicon NPN epitaxial planar type
For low-frequency power amplification
Features
Low collector-emitter saturation voltage VCE(sat)
Satisfactory operation performances at high efficiency with the low-
voltage power supply.
Allowing supply with the radial taping
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
40
V
Collector-emitter voltage (Base open) VCEO
20
V
Emitter-base voltage (Collector open) VEBO
7
V
Collector current
IC
5
A
Peak collector current
ICP
8
A
Collector power dissipation *
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg 55 to +150 °C
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
6.9±0.1
0.7 4.0
0.65 max.
Unit: mm
2.5±0.1
(0.8)
0.45+–00..0150
2.5±0.5
1.05±0.05
2.5±0.5
0.45+–00..0150
123
1: Emitter
2: Collector
3: Base
MT-2-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *1
VCEO
VEBO
ICBO
IEBO
hFE1 *2
IC = 1 mA, IB = 0
IE = 10 µA, IC = 0
VCB = 10 V, IE = 0
VEB = 7 V, IC = 0
VCE = 2 V, IC = 0.5 A
20
V
7
V
0.1
µA
0.1
µA
230
600
hFE2 VCE = 2 V, IC = 2 A
150
Collector-emitter saturation voltage *1 VCE(sat) IC = 3 A, IB = 0.1 A
0.3 1.0
V
Transition frequency *1
fT
VCB = 6 V, IE = −50 mA, f = 200 MHz
150
MHz
Collector output capacitance
Cob VCB = 20 V, IE = 0, f = 1 MHz
50
pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
R
S
hFE1
230 to 380 340 to 600
Publication date: January 2003
SJC00253BED
1

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]