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2SD2111

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

2SD2111

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; RBE= ∞

V(BR)CBO Collector-Base Breakdown Voltage

IC= 0.1mA; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 50mA; IC= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A; IB= 3mA

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB=B 30mA

VBE(sat)-1 Base-Emitter Saturation Voltage

IC= 1.5A; IB= 3mA

VBE(sat)-2 Base-Emitter Saturation Voltage

IC= 3A; IB=B 30mA

ICBO

Collector Cutoff Current

VCB= 100V; IE= 0

ICEO

Collector Cutoff Current

VCE= 100V; RBE= ∞

hFE

DC Current Gain

IC= 1.5A; VCE= 3V

VECF

C-E Diode Forward Voltage

IF= 3A

MIN TYP. MAX UNIT

120

V

120

V

7

V

1.5

V

3.0

V

2.0

V

3.5

V

10

μA

10

μA

1000

20000

3.0

V

isc Website：www.iscsemi.cn

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