2SD2024 Ver la hoja de datos (PDF) - Inchange Semiconductor
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2SD2024 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=50μA; IE=0
VCEsat Collector-emitter saturation voltage IC=3A ;IB=6mA
ICBO
Collector cut-off current
VCB=100V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=2A ; VCE=3V
Product Specification
2SD2024
MIN TYP. MAX UNIT
100
V
100
V
1.5
V
10
μA
3.0 mA
1000
20000
2
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