2SD1820 Ver la hoja de datos (PDF) - TY Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SD1820

Silicon NPN Epitaxial Planar Type

TY Semiconductor 

SMD Type

TransistIoCrs

Product specification

2SD1820

Features

Low collector-emitter saturation voltage VCE(sat).

1 Emitter

2 Base

3 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

Rating

Unit

VCBO

30

V

VCEO

25

V

VEBO

5

V

IC

500

mA

ICP

1

A

PC

150

mW

Tj

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector cutoff current

Forward current transfer ratio

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

Testconditons

VCBO IC = 10 ìA, IE = 0

VCEO IC = 2 mA, IB = 0

VEBO IE = 10 ìA, IC = 0

ICBO VCB = 20 V, IE = 0

hFE VCE = 10 V, IC = 150 mA

VCE(sat) IC = 300 mA, IB = 30 mA

fT VCB = 10 V, IE = -50 mA, f = 200 MHz

Cob VCB = 10 V, IE = 0, f = 1 MHz

Min Typ Max Unit

30

V

25

V

5

V

0.1 ìA

85

340

0.35 0.6 V

200

MHz

6 15 pF

hFE Classification

Marking

Rank

hFE

WQ

Q

85 170

WR

R

120 240

WS

S

170 340

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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