D1846 Ver la hoja de datos (PDF) - SavantIC Semiconductor

Número de pieza

componentes Descripción

Fabricante

D1846

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1846

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-base breakdown voltage

IE=500mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=3A; IB=0.8A

VBEsat

Base-emitter saturation voltage

IC=3A; IB=0.8A

ICBO

Collector cut-off current

VCB=750V; IE=0

VCB=1500V; IE=0

hFE-1

DC current gain

IC=0.5A ; VCE=5V

hFE-2

DC current gain

IC=3A ; VCE=10V

fT

Transition frequency

IC=0.5A ; VCE=10V;f=0.5MHz

VF

Diode forward voltage

IC=3.5A

Switching times resistive load

ts

Storage time

tf

Fall time

IC=3A; IB1=0.8A; IB2=-1.6A

VCC=200V

MIN TYP. MAX UNIT

7

V

8.0

V

1.5

V

10

µA

1.0

mA

5

25

4

2

MHz

2.0

V

1.5

µs

0.2

µs

2

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