2SD1932 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SD1932 Datasheet PDF : 2 Pages
| |||
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1932
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB=B 0
80
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50μA; IE= 0
80
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 4mA
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
1.5
V
100 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
3
mA
hFE
DC Current Gain
IC= 2A; VCE= 3V
1000
10000
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
35
fT
Current-Gain—Bandwidth Product
IE= -0.2A; VCE= 5V; ftest= 10MHz
40
pF
MHz
isc Website：www.iscsemi.cn
2
Share Link: 