2SD1934 Ver la hoja de datos (PDF) - Panasonic Corporation
Número de pieza
componentes Descripción
Fabricante
2SD1934 Datasheet PDF : 4 Pages
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Transistors
2SD1934
Silicon NPN epitaxial planar type
For low-frequency power amplification
For stroboscope
5.0±0.2
Unit: mm
4.0±0.2
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• Satisfactory operation performances at high efficiency with the low-
voltage power supply.
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
40
V
Collector-emitter voltage (Base open) VCEO
20
V
Emitter-base voltage (Collector open) VEBO
7
V
Collector current
IC
5
A
Peak collector current
ICP
8
A
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
0.7±0.1
0.45+–00..12
(1.27)
(1.27)
0.45+–00..115
123
1: Emitter
2.54±0.15
2: Collector
3: Base
TO-92NL-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
20
V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
7
V
Collector-base cutoff current (Emitter open)
Forward current transfer ratio *1
ICBO
hFE1 *2
VCB = 10 V, IE = 0
VCE = 2 V, IC = 0.5 A
0.1
µA
180
600
Collector-emitter saturation voltage *1
hFE2
VCE(sat)
VCE = 2 V, IC = 2.0 A
IC = 3.0 A, IB = 0.1 A
150
1
V
Transition frequency
Collector output capacitance
(Common base, input open circuited)
fT
VCB = 6 V, IE = −50 mA, f = 200 MHz
Cob VCB = 20 V, IE = 0, f = 1 MHz
150
MHz
50
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
P
Q
R
hFE1
180 to 270 230 to 380 340 to 600
Publication date: April 2003
SJC00231BED
1
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