2SD1758 Ver la hoja de datos (PDF) - TY Semiconductor

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2SD1758

TO-252-2L Plastic-Encapsulate NPN Transistors

TY Semiconductor 

Product specification

TO-252-2L Plastic-Encapsulate Transistors

2SD1758 TRANSISTOR (NPN)

TO-252-2L

1.BASE

FEATURES

z Low VCE(sat).VCE(sat) = 0.5V (Typ.)(IC/IB =2A/0.2A)

2.COLLECTOR

3.EMITTER

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

32

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

2

A

PC

Collector dissipation

1.2

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol Test conditions

Min

Collector-base breakdown voltage

V(BR)CBO IC=50μA, IE=0

40

Collector-emitter breakdown voltage

V(BR)CEO IC=1mA, IB=0

32

Emitter-base breakdown voltage

V(BR)EBO IE=50μA, IC=0

5

Collector cut-off current

ICBO

VCB=20V, IE=0

Emitter cut-off current

IEBO

VEB=4V, IC=0

DC current gain

hFE

VCE=3V, IC=500mA

82

Collector-emitter saturation voltage

VCE(sat) IC=2A, IB=0.2A

Transition frequency

fT

VCE=5V, IC=50mA, f=100MHz

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

Typ Max Unit

V

V

V

1

μA

1

μA

390

0.8

V

100

MHz

30

pF

CLASSIFICATION OF hFE

Rank

Range

P

82-180

Q

120-270

R

180-390

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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