2SD1616A(2005) Ver la hoja de datos (PDF) - Unisonic Technologies

Número de pieza

componentes Descripción

Fabricante

2SD1616A
(Rev.:2005)

NPN EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies 

2SD1616/A

TYPICAL CHARACTERISTICS

1000

500

300

Collector Output Capacitance

IE=0

f=1.0MHz

100

50

30

10

5

3

1

3 5 10

30 50 100 300

Collector-Base Voltage, VCB (V)

Static Characteristic

100

IB=300μA

80

IB=250μA

60

IB=200μA

IB=150μA

40

IB=100μA

20

IB=50μA

0

2

4

6

8

10

Collector-Emitter Voltage , VCE (V)

Switching Time

10

VCC=10V

5 IC=10×IB1= -10×IB2

3

1

t STG

0.5

0.3

0.1

tF

0.05

0.03

tON

0.01

0.001 0.003 0.01 0.030.05 0.1 0.30.5 1

Collector Current, IC (A)

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

NPN SILICON TRANSISTOR

Current Gain-Bandwidth Product

1000

500

300

VCE=2V

100

50

30

10

5

3

1

0.01 0.03 0.1 0.3

1

3 5 10

Collector Current, IC (A)

Static Characteristic

10 IB=5.0mA

0.8

IB=3.5mA

IB=3.0mA

IB=2.5mA

0.6

IB=2.0mA

0.4

IB=1.5mA

IB=1.0mA

0.2

IB=0.5mA

0

0.2

0.4

0.6

0.8

10

Collector-Emitter Voltage, VCE (V)

3 of 4

QW-R201-008,C

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